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Niane, Mamadou
- Excitonic Conversions in Semiconductors
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Authors
Affiliations
1 Laboratoire des Semi-Conducteurs et d’Energie Solaire de la Faculté des Sciences et Techniques de l’Universite Cheikh Anta Diop de DAKAR, BP 5005, Dakar-fann, SN
1 Laboratoire des Semi-Conducteurs et d’Energie Solaire de la Faculté des Sciences et Techniques de l’Universite Cheikh Anta Diop de DAKAR, BP 5005, Dakar-fann, SN
Source
International Journal of Engineering Research, Vol 5, No 12 (2016), Pagination: 936-938Abstract
We studied the influence of parameters that govern the excitonic conversion phenomena in semiconductors. In this study we defined a surface conversion velocity of excitons to free electron-hole pairs bs and a parameter of exciton dissociation in the space charge layer b (x) related to the electric field E(x). The influence of bs on the electrons and excitons densities and on the short-circuit current shows that this parameteris a generation term for electrons and a recombination term for excitons. In the organic semiconductor where the excitons have a very short lifetime and a binding energy superior to thermal energy, an exciton conversion model is essential to increase the performance of these solarcells. Our study showed that the short circuit current has a high value when the exciton conversion speed is of the order of 104 cm.s-1.Keywords
Exciton, Excitonic Conversion, Binding Coefficient.- Influence of the Refractive Index of Anti-Reflective Coating on the External Quantum Efficiency of the Silicon Solar Cells
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Authors
Nacire Mbengue
1,
Moulaye Diagne
1,
Fatou Dia
1,
Mamadou Niane
1,
Awa Dieye
1,
Wally Diallo
1,
Omar A. Niasse
1,
Bassirou Ba
1
Affiliations
1 Laboratoire De Semi-Conducteurs, Et D'energie Solaire, Departement De Physique, UCAD, Senegal, ZA
1 Laboratoire De Semi-Conducteurs, Et D'energie Solaire, Departement De Physique, UCAD, Senegal, ZA